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Nonlinear model-based control of the Czochralski process I: Motivation, modeling and feedback controller design

Identifieur interne : 003C37 ( Main/Repository ); précédent : 003C36; suivant : 003C38

Nonlinear model-based control of the Czochralski process I: Motivation, modeling and feedback controller design

Auteurs : RBID : Pascal:10-0171877

Descripteurs français

Pascal (Inist)
- Modélisation, Etude théorique, Boucle réaction, Modèle mathématique, Condition aux limites, Système commande, Pistage, Croissance cristalline, Taux croissance, Trajectoire, Résultat expérimental, Mécanisme croissance, Arséniure de gallium, Composé III-V, Semiconducteur III-V, Phosphure d'indium, Méthode Czochralski, Croissance cristalline en phase fondue, Encapsulation, GaAs, InP, 8110, 8110A, 8110F.

English descriptors

KwdEn :
- Boundary conditions, Control systems, Crystal growth, Crystal growth from melts, Czochralski method, Encapsulation, Experimental result, Feedback, Gallium arsenides, Growth mechanism, Growth rate, III-V compound, III-V semiconductors, Indium phosphide, Mathematical models, Modelling, Theoretical study, Tracking, Trajectories.

Abstract

This paper presents a new approach for model-based control of the Czochralski process. The main idea is not to rely on a complex mathematical model of the overall process. Such a model usually suffers from many unknown parameters, boundary and initial conditions making the control system not robust. Instead, only those parts of the process are modeled the parameters of which are known with sufficient accuracy and the structure of which is sufficiently precise. From this model a nonlinear model-based controller is derived as the core of the proposed control system. It is used in combination with conventional PID controllers. Doing so, tracking of crystal diameter and growth rate trajectories is realized with a lot of model knowledge included in the control system. Thus, its performance is improved greatly. The usefulness of the approach is proven by several experimental results from growth of gallium-arsenide (GaAs) and indium-phosphide (InP) crystals.

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Le document en format XML

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<author><name sortKey="Winkler, J" uniqKey="Winkler J">J. Winkler</name>
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<author><name sortKey="Neubert, M" uniqKey="Neubert M">M. Neubert</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Leibniz-Institut für Kristallzüchtung, Max-Bom-Strasse 2</s1>
<s2>12489 Berlin</s2>
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<author><name sortKey="Rudolph, J" uniqKey="Rudolph J">J. Rudolph</name>
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<term>Czochralski method</term>
<term>Encapsulation</term>
<term>Experimental result</term>
<term>Feedback</term>
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<front><div type="abstract" xml:lang="en">This paper presents a new approach for model-based control of the Czochralski process. The main idea is not to rely on a complex mathematical model of the overall process. Such a model usually suffers from many unknown parameters, boundary and initial conditions making the control system not robust. Instead, only those parts of the process are modeled the parameters of which are known with sufficient accuracy and the structure of which is sufficiently precise. From this model a nonlinear model-based controller is derived as the core of the proposed control system. It is used in combination with conventional PID controllers. Doing so, tracking of crystal diameter and growth rate trajectories is realized with a lot of model knowledge included in the control system. Thus, its performance is improved greatly. The usefulness of the approach is proven by several experimental results from growth of gallium-arsenide (GaAs) and indium-phosphide (InP) crystals.</div>
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Nonlinear model-based control of the Czochralski process I: Motivation, modeling and feedback controller design

Nonlinear model-based control of the Czochralski process I: Motivation, modeling and feedback controller design

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri